Semiconductor laser device

ABSTRACT

A semiconductor laser device is disclosed which comprises a semiconductor substrate having a ridge portion, the width of the ridge portion being smaller in the vicinity of the facets than in the inside of the device; a current blocking layer formed on the substrate including the ridge portion; at least one striped groove formed on the center of the ridge portion through the current blocking layer; and a multi-layered structure disposed on the current blocking layer, the multi-layered structure successively having a first current blocking layer, an active layer for laser oscillation, and a second current blocking layer; wherein at least two side grooves are symmetrically formed on both sides of the center region of the ridge portion with the same width as that of the regions thereof near the facets. Also, disclosed is a method for producing the semiconductor laser device.

This application is a division of application Ser. No. 07/455,574 filed,Dec. 22, 1989, now U.S. Pat. No. 5,054,031.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to a high-power semiconductor laser device inwhich the density of laser light within the active layer is reduced inthe vicinity of the cavity facets.

2. Description of the Prior Art

In recent years, semiconductor laser devices have been widely used as alight source for optical disk players and optical communication systems.The semiconductor laser devices used for these applications are requiredto emit laser light with high output power. However, the output power ofsemiconductor laser devices which have been put to practical use is onlyas high as 50 mW. One possible reason that high output power cannot beattained is deterioration of crystals at the cavity facets. To reducethe crystal deterioration, liquid phase epitaxy (LPE) is used to makethe thickness of an active layer smaller in the vicinity of the facetsthan in the inside of the device, thereby reducing the density of laserlight within the active layer in the vicinity of the facets.

FIG. 5c shows a conventional semiconductor laser device with a T³structure which is well known as a device of this type (see, e.g.,Technical Report of Mitsubishi Denki Co., Ltd., Vol. 62, No. 7, 14(566),1988). FIG. 5d is a top plan view showing the semiconductor laserdevice, in which a ridge configuration is indicated by broken lines.FIGS. 5a and 5b are perspective views showing the production of thesemiconductor laser device.

The semiconductor laser device of FIG. 5c is produced as follows: On theplane of a p-GaAs substrate 21, a ridge portion 32 with a height of 2 μmis formed by an etching technique. The width of the ridge portion 32 issmall in the vicinity of the facets and great in the inside of thedevice, as shown in FIG. 5a. Then, on the entire surface of thesubstrate 21 including the ridge portion 32, an n-GaAs current blockinglayer 22 is formed by an epitaxial growth method and on the center ofthe ridge portion 32, a V-striped groove 31 is formed through thecurrent blocking layer 22 by an etching technique, as shown in FIG. 5b.Moreover, on the entire surface of the current blocking layer 22including the V-striped groove 31, a p-AlGaAs first cladding layer 23 anAlGaAs active layer 24, an n-AlGaAs second cladding layer 25, and ann-GaAs cap layer 26 are successively grown by liquid phase epitaxy,resulting in a double-heterostructure shown in FIG. 5c.

In cases where crystal growth on the substrate having the ridge portionis conducted by liquid phase epitaxy as described above, the crystalgrowth is promoted on the side faces of the ridge portion, whereas thecrystal growth is suppressed on the upper face of the ridge portion.This phenomenon is well known as an anisotropy of crystal growth andthis property causes a significantly thinner crystal film to be grown onthe upper face than on the side faces of the ridge portion.

With the use of the anisotropy of crystal growth, the thickness of alayer formed on the ridge portion can be controlled by a change in thewidth of the ridge portion. That is, the grown layer becomes thick inthe wide region but becomes thin in the narrow region of the ridgeportion. Therefore, when several layers including the active layer 24are formed on the ridge portion 32 of a configuration shown in FIG. 5aby liquid phase epitaxy, the active layer 24 becomes thin in thevicinity of the facets but becomes thick in the inside of the device. Inthe T³ type semiconductor laser device produced in such a manner,because the active layer 24 is thin in the vicinity of the facets, partof laser light enters into the first cladding layer 23 and the secondcladding layer 25 in the vicinity of the facets, thereby reducing thedensity of the laser light within the active layer 24. Thus, opticaloutput power at the limit of destruction can be improved to attainhigh-power operation.

In the T³ type semiconductor laser device as produced above, the firstcladding layer 23 should be grown prior to the growth of the activelayer 24 and serious problems arise therefrom.

The first cladding layer 23 is thin in the vicinity of the facets andthick in the inside of the device because of the growth by liquid phaseepitaxy. Such a difference in the thickness of the first cladding layer23 is not preferred, because the thickness of the first cladding layer23 should be set at a value suitable for the formation of an appropriateindex guiding mechanism.

The active layer 24 is not also flat and has irregularities as large as0.2 μm, because it is formed on the uneven first cladding layer 23 byliquid phase epitaxy. This situation is shown in a sectional view ofFIG. 6, which is taken at line VI--VI of FIG. 5d. Thus, theirregularities of the active layer 24 cause the occurrence of sub-peaksin the vertical direction of the far field pattern of emitted light,resulting in a deterioration of the device characteristics.

SUMMARY OF THE INVENTION

The semiconductor laser device of this invention, which overcomes theabove-discussed and numerous other disadvantages and deficiencies of theprior art, comprises a semiconductor substrate having a ridge portion,the width of the ridge portion being smaller in the vicinity of thefacets than in the inside of the device; a current blocking layer formedon the substrate including the ridge portion; at least one stripedgroove formed on the center of the ridge portion through the currentblocking layer; and a multi-layered structure disposed on the currentblocking layer, the multi-layered structure successively having a firstcurrent blocking layer, an active layer for laser oscillation, and asecond current blocking layer; wherein at least two side grooves aresymmetrically formed on both sides of the center region of the ridgeportion with the same width as that of the regions thereof near thefacets.

In a preferred embodiment, the upper face of the first cladding layer issubstantially flat.

In a preferred embodiment, the thickness of the active layer is smallerin the vicinity of the facets than in the inside of the device.

In a preferred embodiment, the multi-layered structure is formed byliquid phase epitaxy.

The method for producing a semiconductor laser device of this invention,comprises the steps of: forming a ridge portion on a semiconductorsubstrate; forming at least two side grooves symmetrically on both sidesof the center region of the ridge portion with the same width as that ofthe regions thereof near the facets; growing a current blocking layer onthe entire surface of the substrate including the ridge portion; formingat least one striped groove on the center of the ridge portion throughthe current blocking layer; and forming a multi-layered structure on thecurrent blocking layer, the multi-layered structure having an activeregion for laser oscillation.

In a preferred embodiment, the multi-layered structure is formed byliquid phase epitaxy.

Thus, the invention described herein makes possible the objectives of(1) providing a semiconductor laser device which can attain laseroscillation of high output power without degrading the devicecharacteristics; and (2) providing a method for producing such asemiconductor laser device with excellent reproducibility.

BRIEF DESCRIPTION OF THE DRAWINGS

This invention may be better understood and its numerous objects andadvantages will become apparent to those skilled in the art by referenceto the accompanying drawings as follows:

FIG. 1 is a perspective view showing a semiconductor laser device ofthis invention.

FIGS. 2a to 2e are perspective views showing the production of thesemiconductor laser device of FIG. 1.

FIG. 3a is a perspective view showing a substrate for anothersemiconductor laser device of this invention, wherein the substrate isprovided with a ridge portion having side grooves.

FIG. 3b is a top plan view showing the substrate of FIG. 3a, wherein acurrent blocking layer is grown on the entire surface of the substrateand then three V-striped grooves are formed on the center of the ridgeportion.

FIGS. 4a and 4b are top plan views showing different substrates forother semiconductor laser devices of this invention, wherein each of thesubstrates is provided with a ridge portion having side grooves and thena current blocking layer is grown on the entire surface thereof, afterwhich a V-striped groove is formed on the center of the ridge portion.

FIGS. 5a to 5c are perspective views showing the production of aconventional T³ type semiconductor laser device.

FIG. 5d is a top plan view showing the semiconductor laser device ofFIGS. 5a to 5c.

FIG. 6 is a sectional view taken at line VI--VI of FIG. 5d.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

The semiconductor laser device of this invention is produced on asemiconductor substrate having a ridge portion. The width of the ridgeportion is smaller in the vicinity of the facets than in the inside ofthe device. The ridge portion is provided with at least two symmetricside grooves on both sides of the center region thereof. Thisconstitution makes it possible to grow semiconductor layers (e.g., acurrent blocking layer and a first cladding layer) so as to have asubstantially flat surface above the ridge portion. That is, during theformation of the first cladding layer, the side grooves aresubstantially buried in the first current blocking layer, so that theupper face of the first cladding layer is substantially flat. Thus, anactive layer can be grown without irregularities on the first claddinglayer such that the thickness of the active layer is smaller in thevicinity of the facets than in the inside of the device. For thisreason, the semiconductor laser device can attain laser oscillation ofhigh output power without degrading the device characteristics.

EXAMPLES

FIG. 1 shows a semiconductor laser device of this invention. Thissemiconductor laser device was produced as shown in FIGS. 2a to 2e. Thefollowing describes the production of the semiconductor laser device byreference to these figures.

On the plane of a p-GaAs substrate 1, a ridge portion 9 with a height of2 μm was formed by an etching technique. The ridge portion 9 has anuneven configuration, the width of which is 20 μm in the regions nearthe facets and 50 μm in the center region of the substrate 1. Betweenthese two regions, the width of the ridge portion 9 changes graduallyfrom 20 μm to 50 μm. Moreover, the ridge portion 9 was provided with twosymmetric side grooves 10 on both sides of the center region with thesame width as that of the regions near the facets, as shown in FIG. 2a.The cavity length of a resonator is 250 μm. The two regions with a widthof 20 μm in the vicinity of the facets have a length of 40 μm in theresonating direction, respectively; the two regions with a width changedgradually have a length of 40 μm, respectively; and the center region ofthe resonator, with a width of 50 μm, has a length of 90 μm.

Then, on the entire surface of the p-GaAs substrate 1 including theridge portion 9, an n-GaAs current blocking layer 2 was formed by liquidphase epitaxy as shown in FIG. 2b. Because the width of the ridgeportion 9 in the regions near the facets is the same as that of theridge portion 9 in the center region interposed between the side grooves10, the current blocking layer 2 can be formed to have an even thickness(e.g., 0.8 μm in this example) both in the regions near the facets andin the center region. Even after the formation of the current blockinglayer 2, the side grooves 10 remained partially unfilled. Alternatively,metal-organic chemical vapor deposition can be used for the growth ofthe current blocking layer 2 of the same configuration.

Then, on the center of the ridge portion 9, a V-striped groove 11 isformed to reach the p-GaAs substrate 1 through the current blockinglayer 2, as shown in FIG. 2c, by an etching technique. The V-stripedgroove 11 makes it possible to confine a current to be injected into anactive region. Thereafter, on the entire surface, a p-GaAlAs firstcladding layer 3 is grown by liquid phase epitaxy as shown in FIG. 2d.The p-GaAlAs first cladding layer 3 also has an even thickness (e.g.,0.3 μm in this example) both in the regions near the facets and in thecenter region because of the presence of the side grooves 10. During theformation of the p-GaAlAs first cladding layer 3, the side grooves 10were entirely or substantially buried in the p-GaAlAs first claddinglayer 3, on which GaAlAs active layer 4 was then formed by liquid phaseepitaxy. In an early stage of the growth of the GaAlAs active layer 4,the side grooves 10 were entirely buried therein, so that the GaAlAsactive layer 4 was thick in the center region and thin in the regionsnear the facets. In this example, the thickness of the GaAlAs activelayer 4 on the V-striped groove 11 was 0.08 μm in the center region and0.03 μm in the regions near the facets.

Next, on the surface of the GaAlAs active layer 4, an n-GaAlAs secondcladding layer 5 and an n-GaAs contact layer 6 were successively grownas shown in FIG. 2e. Finally, on the back face of the p-GaAs substrate 1and the upper face of the n-GaAs contact layer 6, a p-sided electrode 7and an n-sided electrode 8 were formed, resulting in a semiconductorlaser device as shown in FIG. 1.

The semiconductor laser device of this example attained continuous laseroscillation with the maximum optical output power of 300 mW at roomtemperature. Moreover, the semiconductor laser device operated stablyfor the long period of 3,000 hours or more under the output power of 100mW at 50° C., indicating high reliability of the device. During theabove-mentioned operation, the laser oscillation stably continued in thefundamental traverse mode and the far field pattern was stabilizedagainst a change in the optical output power. The spread angle of laserbeams emitted from the device was about 10 degrees in a directionparallel to the semiconductor layers of the device and about 20 degreesin the direction at right angles thereto (wherein the spread angle isexpressed in terms of a full angle at half maximum). Thus, the ratio ofan angle in the vertical direction to an angle in the horizontaldirection is small, thereby attaining high coupling efficiency to anexternal optical system.

In the same manner as mentioned above another semiconductor laser deviceof this invention ridge portion 9 having side grooves 10 as shown inFIG. 3a, and after the growth of a current blocking layer thereon, threeV-striped grooves 11 were formed on the ridge portion as shown in FIG.3b.

FIGS. 4a and 4b show different substrates for other semiconductor laserdevices of this invention, wherein each of the substrates was providedwith a ridge portion 9 having side grooves 10 and then a currentblocking layer was grown on the entire surface thereof, after which aV-striped groove 11 was formed on the center of the ridge portion. Withthe use of these substrates, semiconductor laser devices were producedin the same manner as mentioned above.

The semiconductor laser devices produced from the substrates shown inFIGS. 3b, 4a, and 4b, respectively, attained excellent devicecharacteristics similar to those of the semiconductor laser device shownin FIG. 1.

It is understood that various other modifications will be apparent toand can be readily made by those skilled in the art without departingfrom the scope and spirit of this invention. Accordingly, it is notintended that the scope of the claims appended hereto be limited to thedescription as set forth herein, but rather that the claims be construedas encompassing all the features of patentable novelty that reside inthe present invention, including all features that would be treated asequivalents thereof by those skilled in the art to which this inventionpertains.

What is claimed is:
 1. A method for producing a semiconductor laserdevice, comprising the steps of: forming a ridge portion on asemiconductor substrate, the width of said ridge portion being smallerin the vicinity of the facets than in the inside of the device; formingat least three V-striped side grooves symmetrically on both sides of thecenter region of said ridge portion with the same width as that of theregions thereof near the facets, respectively; growing a currentblocking layer on the entire surface of said substrate including theridge portion; forming at least one striped groove for an opticalwaveguide on the center of said ridge portion through the currentblocking layer; and forming a multi-layered structure on said currentblocking layer, said multi-layered structure having an active region forlaser oscillation.
 2. A method for producing a semiconductor laserdevice according to claim 1, wherein said multi-layered structure isformed by liquid phase epitaxy.